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| Technische Information / Technical Information Netz-Thyristor-Modul Phase Control Thyristor Module TT 330 N 12...16 Tvj = - 40C...Tvj max N Elektrische Eigenschaften / Electrical properties Hochstzulassige Werte / Maximum rated values Periodische Vorwarts- und Ruckwarts-Spitzensperrspannung repetitive peak forward off-state and reverse voltages Vorwarts-Stospitzensperrspannung non-repetitive peak forward off-state voltage Ruckwarts-Stospitzensperrspannung non-repetitive peak reverse voltage Durchlastrom-Grenzeffektivwert RMS on-state current Dauergrenzstrom average on-state current Stostrom-Grenzwert surge current Grenzlastintegral It-value Kritische Stromsteilheit critical rate of rise of on-state current Kritische Spannungssteilheit critical rate of rise of off-state voltage Charakteristische Werte / Characteristic values Durchlaspannung on-state voltage Schleusenspannung threshold voltage Ersatzwiderstand slope resistance Zundstrom gate trigger current Zundspannung gate trigger voltage Nicht zundender Steuerstrom gate non-trigger current Nicht zundende Steuerspannung gate non-trigger voltage Haltestrom holding current Einraststrom latching current Vorwarts- und Ruckwarts-Sperrstrom forward off-state and reverse currents Zundverzug gate controlled delay time Freiwerdezeit circuit commutated turn-off time Tvj = Tvj max, iT = 800A TC = 85C VDRM, VRRM VDSM VRSM ITRMSM ITAVM ITSM It (diT/dt)cr (dvD/dt)cr 1200, 1400 1600 1200, 1400 1600 1300, 1500 1700 520 330 9100 8000 414000 320000 250 V V V V V V A A A A As As A/s Tvj = - 40C...Tvj max Tvj = + 25C...Tvj max Tvj = 25C, tp = 10ms Tvj = Tvj max, tp = 10ms Tvj = 25C, tp = 10ms Tvj = Tvj max, tp = 10ms DIN IEC 747-6 f = 50Hz, iGM = 1A, diG/dt = 1A/s Tvj = Tvj max, vD = 0,67 VDRM 6. Kennbuchstabe / 6th letter F 1000 V/s vT V(TO) rT IGT VGT IGD VGD IH IL iD, iR tgd tq max. 1,44 0,8 0,6 V V m mA V mA mA V mA mA mA s Tvj = Tvj max Tvj = Tvj max Tvj = 25C, vD = 6V max. max. max. max. max. max. max. max. max. 200 2,0 10 5 0,2 300 1200 70 3,0 Tvj = 25C, vD = 6V Tvj = Tvj max, vD = 6V Tvj = Tvj max, vD = 0,5 VDRM Tvj = Tvj max, vD = 0,5 VDRM Tvj = 25C, vD = 6V, RA = 5 Tvj = 25C, vD = 6V, RGK 10 iGM = 1A, diG/dt = 1A/s, tG = 20s Tvj = Tvj max vD = VDRM, vR = VRRM DIN IEC 747-6 Tvj = 25C, iGM = 1A, diG/dt = 1A/s Tvj = Tvj max, iTM = 350A vRM = 100V, VDM = 0,67 VDRM dvD/dt = 20V/s, -diT/dt = 10A/s 5. Kennbuchstabe / 5th letter O RMS, f = 50Hz, t = 1min RMS, f = 50Hz, t = 1sec typ. VISOL 250 3,0 3,6 s kV kV Isolations-Prufspannung insulation test voltage MOD-MA; R. Jorke 27. Nov 97 A 122/97 Seite/page 1(4) Technische Information / Technical Information Netz-Thyristor-Modul Phase Control Thyristor Module TT 330 N 12...16 pro Modul / per module, = 180sin pro Zweig / per arm, = 180sin pro Modul / per module, DC pro Zweig / per arm, DC pro Modul / per module pro Zweig / per arm N Thermische Eigenschaften / Thermal properties Innerer Warmewiderstand thermal resistance, junction to case RthJC max. max. max. max. max. max. 0,059 0,117 0,056 0,111 C/W C/W C/W C/W Ubergangs-Warmewiderstand thermal resistance, case to heatsink Hochstzulassige Sperrschichttemperatur max. junction temperature Betriebstemperatur operating temperature Lagertemperatur storage temperature RthCK Tvj max Tc op Tstg 0,020 C/W 0,040 C/W 135 C - 40...+135 C - 40...+140 C Mechanische Eigenschaften / Mechanical properties Gehause, siehe Anlage case, see appendix Si-Elemente mit Druckkontakt, Amplifying-Gate Si-pellets with pressure contact, amplifying-gate Innere Isolation internal insulation Anzugsdrehmoment fur mechanische Befestigung mounting torque Anzugsdrehmoment fur elektrische Anschlusse terminal connection torque Gewicht weight Kriechstrecke creepage distance Schwingfestigkeit vibration resistance f = 50Hz Toleranz / tolerance 15% Seite 3 page 3 AlN M1 M2 G 6 Nm 12 Nm Toleranz / tolerance +5% / -10% typ. 800 g 17 mm 50 m/s Mit dieser technischen Information werden Halbleiterbauelemente spezifiziert, jedoch keine Eigenschaften zugesichert. Sie gilt in Verbindung mit den zugehorigen Technischen Erlauterungen. / This technical Information specifies semiconductor devices but promises no characteristics. It is valid in combination with the belonging technical notes. MOD-MA; R. Jorke 27. Nov 97 Seite/page 2(4) Technische Information / Technical Information Netz-Thyristor-Modul Phase Control Thyristor Module TT 330 N 12...16 N MOD-MA; R. Jorke 27. Nov 97 Seite/page 3(4) Technische Information / Technical Information Netz-Thyristor-Modul Phase Control Thyristor Module TT 330 N 12...16 N Analytische Elemente des transienten Warmewiderstandes ZthJC fur DC Analytical elements of transient thermal impedance ZthJC for DC Pos. n 1 2 3 4 5 6 7 R thn[ C / W] 0,0031 n [s] 0,0097 0,0259 0,0359 0,0366 0,0009 0,0080 0,1100 0,6100 3,0600 nmax Analytische Funktion: Z thJC = R n= 1 t - 1 - e n thn MOD-MA; R. Jorke 27. Nov 97 Seite/page 4(4) |
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